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研究用热灯丝化学气相沉积（ＨＦＣＶＤ）法在Ｍ０衬底上生长多晶金刚石膜。实验研究表明，负偏压对金刚石膜生长的影响十分显著，这是负偏压极大地影响了金刚石的核密度引起的，研究表明，来自金刚石的发射电子对气体分子的撞击，加速了ＣＨ４、Ｈ２分子离化，在衬底表面附近形成了一等离子体区，使Ｍ０衬底上金刚石的核密度可达１０９ｃｍ－２
The growth of polycrystalline diamond films on M0 substrates was investigated by hot filament chemical vapor deposition (HFCVD). Experimental studies have shown that the negative bias on the diamond film growth is very significant, which is a negative bias greatly affects the diamond density caused by nuclear, studies have shown that the emission from diamond electron gas molecules on the impact of accelerating the CH4, H2 molecular ionization, a plasma region is formed near the surface of the substrate, so that the diamond density on the M0 substrate can reach 109cm-2