介绍了砷化镓MESFET的可靠性和失效模式的短期研究结果。在这个研究期间观察到两种失效模式,已审定了减少其发生的改进的制造技术。所得到的结果表明,可以制造出极其可靠的器件,预计在70℃结温下,其失效前平均时间超过10~7小时。超过五十万器件小时的室温寿命试验证实了这些予言。 The short-term results of the reliability and failure modes of gallium arsenide MESFETs are presented. Two failure modes were observed during this study, and improved manufacturing techniques to reduce their occurrence have been validated. The results obtained show that extremely reliable devices can be fabricated and are expected to have an average time before failure of 10 to 7 hours at a junction temperature of 70 ° C. Room temperature life tests of more than half a million devices confirmed these statements.