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采用准分子激光诱导ＣＶＤ淀积ＳｎＯ＿２透明导电薄膜，并在其生长过程中进行掺杂Ｓｂ的实验，研究了薄膜生长速率及薄膜电阻率与激光能量密度的关系，得到了电阻率为１．４９×１０￣（－３）Ω·ｃｍ的高质量的ＳｎＯ＿２薄膜。
Using the excimer laser induced CVD deposition of SnO 2 transparent conductive film, and during the growth of Sb doping experiments, the relationship between the film growth rate and the film resistivity and the laser energy density, the resistivity of 1.49 × 10 ~ (-3) Ω · cm high quality SnO 2 film.