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带电荷泵的存储单元占面积较大是进一步发展的困难。但根据目前的工艺水平,芯片的存储容量还可以进一步提高。Intel公司已做出4096位/芯片的带电荷泵的Intel2106随机存储器(RAM),并在线路和工艺上做了改进,提高了性能和使用灵活性。首先提高了电荷泵振幅的下电平。在7001型存储器中,为了提高泵电流的效率,电荷泵振幅的下电平需要比(V_(BX)-2)伏还低(对N沟道而言)。这样,电荷泵的输入端就不好加保护器件。2106型的工艺中,在泵电容的栅下采用离子注入的办法注入一层P~+杂质,以使电
Charged with a large area of ?? memory cells accounted for further development difficulties. However, according to the current level of technology, the chip’s storage capacity can be further improved. Intel Corporation has made 4096-bit / chip Charge Pump Intel2106 random access memory (RAM), and the circuit and process improvements have been made to improve the performance and flexibility of use. First increase the charge pump amplitude of the next level. In the Model 7001 memory, the lower level of the charge pump amplitude needs to be lower (V_ (BX) -2) volts (for N-channel) in order to increase the efficiency of the pump current. In this way, the charge pump input is not good to protect the device. 2106-type process, the pump capacitor gate ion implantation method using a layer of P ~ + impurities, so that electricity