【摘 要】
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Ge has been an alternative channel material for the performance enhancement of complementary metal-oxide-semiconductor (CMOS) technology applications because of its high carrier mobility and superior compatibility with Si CMOS technology.The gate structur
【机 构】
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Faculty of Information Technology,School of Microelectronics,Beijing University of Technology,Beijin
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Ge has been an alternative channel material for the performance enhancement of complementary metal-oxide-semiconductor (CMOS) technology applications because of its high carrier mobility and superior compatibility with Si CMOS technology.The gate structure plays a key role on the electrical property.In this paper,the property of Ge MOSFET with Al2O3/GeOx/Ge stack by ozone oxidation is reviewed.The GeOx passivation mechanism by ozone oxidation and band align-ment of Al2O3/GeOx/Ge stack is described.In addition,the charge distribution in the gate stack and remote Coulomb scatter-ing on carrier mobility is also presented.The surface passivation is mainly attributed to the high oxidation state of Ge.The en-ergy band alignment is well explained by the gap state theory.The charge distribution is quantitatively characterized and it is found that the gate charges make a great degradation on carrier mobility.These investigations help to provide an impressive un-derstanding and a possible instructive method to improve the performance of Ge devices.
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