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ZnO作为第三代半导体功能材料,一直受到国内外的广泛关注。高质量的p型掺杂是基于光电器件应用的关键。综述了获得p型ZnO薄膜的制备方法和掺杂技术的研究进展,讨论了目前生长高质量的p型ZnO薄膜存在的困难,并对不同方法制备的p型ZnO薄膜的特点进行了比较分析。
As the third generation semiconductor functional material, ZnO has been widely concerned at home and abroad. High quality p-type doping is the key to optoelectronic devices. The research progress of preparation and doping techniques for obtaining p-type ZnO thin films are reviewed. The difficulties of growing high quality p-type ZnO thin films are discussed. The characteristics of p-type ZnO thin films prepared by different methods are compared and analyzed.