在低激发动率密度条件下研究了混晶材料ＧａＡｓ１－ｘＰｘ：Ｎ（ｘ＝０．８８）中的ＮＮｉ对束缚激子发光．发现随温度升高，在光致发光谱中依次出现ＮＮ３和ＮＮ１发光带，同时Ｎｘ带明显热猝灭．在低温下，降低激发功率密度，Ｎｘ谱带移向低能端并且窄化．结果表明，在低激发功率密度下，热激活的Ｎｘ→ＮＮｉ激子转移过程明显加强，激子转移的机制主要是变程跳跃过程． The excited exciton emission of NNi in mixed GaAs1-xPx: N (x = 0.88) was investigated at low activation rate. It was found that with the increase of temperature, NN3 and NN1 luminescence bands appeared in the photoluminescence spectrum, while Nx band was significantly quenched. At low temperatures, the excitation power density is reduced and the Nx band moves toward the lower end and narrows. The results show that at low excitation power density, the heat-activated Nx → NNi exciton transfer process is significantly enhanced, and the mechanism of exciton transfer is mainly the variable-jump process.