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总结了在５０ｍｍＧａＡｓ圆片上实现自对准介质膜隔离等平面工艺技术的研究，着重描述了离子注入、自对准亚微米难熔栅制备、钝化介质膜生长、干法刻蚀、电阻和电容制备等关键工艺的研究结果。这套工艺的均匀性、重复性好，在５０ｍｍＧａＡｓ圆片上获得了满意的成品率。采用这套工艺已成功地研制出多种性能良好的ＧａＡｓＩＣ和ＧａＡｓ功率ＭＥＳＦＥＴ，证明国家自然科学基金委员会这一重大课题的选择对发展我国ＧａＡｓＩＣ确实具有重大意义。
In this paper, we summarize the research on planar technology of self-aligned dielectric film isolation on 50mm GaAs wafer, and mainly focus on ion implantation, self-aligned submicron refractory gate, passivation dielectric film growth, dry etching, resistance and capacitance Preparation and other key technology research results. The process of uniformity, repeatability, 50mmGaAs wafer obtained satisfactory yield. The use of this process has successfully developed a variety of well-behaved GaAsIC and GaAs power MESFETs, demonstrating that NSFC’s selection of this major issue is of great significance for the development of GaAsIC in our country.