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本文以Sn(CH_3)_4为物质源,采用MOCVD技术,研制了10~2—10~4(?)不同厚度的多晶薄膜,并揭示了它的结晶形态及光电化学性质。
In this paper, the polycrystalline thin films with different thickness of 10 ~ 2-10 ~ 4 (?) Were prepared by using MOCVD technology with Sn (CH_3) _4 as the material source, and its crystalline morphology and the photoelectrochemical properties were revealed.