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采用等离子体增强化学气相沉积(PECVD)方法制备含有纳米晶硅的S iO2(NCSO)和含有非晶纳米硅颗粒的氢化非晶氧化硅(a-S iOx∶H)薄膜。采用离子注入和高温退火方法将稀土Er掺入含有纳米晶硅(nc-S i)和非晶纳米硅(a-n-S i)颗粒的基体中。利用IFS/20HR傅里叶变换红外光谱仪和微区拉曼散射光谱仪研究含有纳米晶硅和非晶纳米硅颗粒的薄膜掺稀土前后的发光特性。结果表明来自nc-S i在800 nm的发光强度比来自a-S iOx∶H基体中非晶纳米硅的发光强度高近一个数量级,而来自a-S iOx∶H在1.54μm的发光强度比NCSO高4倍。还研究了掺铒a-S iOx∶H薄膜中S i颗粒和Er3+的发光强度随退火温度的变化,结合掺铒纳米晶硅和非晶纳米硅薄膜发光强度随Er掺杂浓度变化和Ram an散射等的测量结果,进一步明确指出a-S i颗粒在Er3+的激发中可以起到和nc-S i同样的作用,即作为光吸收介质和敏化剂的作用。
S iO2 (NCSO) containing nanocrystalline silicon and hydrogenated amorphous silicon oxide (a-SiO x: H) film containing amorphous nanosilica particles were prepared by plasma enhanced chemical vapor deposition (PECVD). Rare earth Er was doped into a matrix containing nanocrystalline silicon (nc-Si) and amorphous nanosilica (a-n-Si) particles by ion implantation and high temperature annealing. The luminescence properties of thin films doped with nanocrystalline silicon and amorphous silicon nano-particles before and after rare earth doped with IFS / 20HR Fourier transform infrared spectrometer and micro-area Raman scattering spectrometer were studied. The results show that the luminescence intensity from nc-S i at 800 nm is one order of magnitude higher than the luminescence intensity from amorphous nanosilicon in aS iOx:H matrix whereas the luminescence intensity at 1.54 μm from aS iOx: H is four times higher than NCSO . The emission intensities of Si particles and Er3 + in erbium-doped aSiOx:H thin films were also investigated. The emission intensities of Er-doped nanocrystalline silicon and amorphous nanocrystalline silicon films with Er doping concentration and Raman scattering , It is further clarified that aSi particles can play the same role as nc-Si in Er3 + excitation, ie act as a light-absorbing medium and a sensitizer.