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A novel advanced soft punch through(SPT) IGBT signed as SPTC-IGBT is investigated.Static and dynamic characteristics are simulated based on the 1200 V device structure and adopted technology.Extensive research on the structure optimization of SPTC-IGBT is presented and discussed.Compared with the structure of conventional IGBT,SPTC-IGBT has a much lower collector-emitter saturation voltage and better switching characteristics.Therefore it is very suitable for applications blocking a voltage higher than 3000 V.In addition,due to the improvement of switching speed achieved by using a thinner chip,SPTC-IGBT is also very competitive in 1200 V and 1700 V applications.
A novel advanced soft punch through (SPT) IGBT signed as SPTC-IGBT is investigated. Dynamic and dynamic characteristics are simulated based on the 1200 V device structure and adopted technology. Extensive research on the structure optimization of SPTC-IGBT was presented and discussed. Compared with the structure of conventional IGBT, SPTC-IGBT has a much lower collector-emitter saturation voltage and better switching characteristics. Herefore it is very suitable for applications blocking a voltage higher than 3000 V. In addition, due to the improvement of switching speed achieved by using a thinner chip, SPTC-IGBT is also very competitive in 1200 V and 1700 V applications.