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利用磁控溅射和阳光刻技术在玻璃基底上成功制备了不同厚度SnO2的表面传导场致发射阴极阵列,并测试其场致发射性能。X射线衍射和X射线光电子谱测试表明,沉积在阴极和栅极之间的薄膜为SnO2薄膜;原子显微镜测试表明,SnO2薄膜形貌的粗糙度随沉积时间的增长而增加,晶粒大小也随着膜厚的增加而增大。场发射测试表明,制备的SnO2表面传导场致发射阴极阵列的传导电流和发射电流完全被栅极电压控制;在SnO2薄膜厚度为60nm时,阳极电压和栅极电压分别为3200 V和200 V,阴阳间距为500μm时,SnO2表面传导场致发射阴极阵列的电子发射效率为0.72%,发光亮度为650 cd/m2,表明SnO2薄膜在表面传导场致发射阴极阵列方面有着较好的应用潜力。
The surface conduction field emission cathode array with different thickness of SnO2 was successfully prepared on glass substrate by magnetron sputtering and solar lithography, and the field emission performance was tested. The results of X-ray diffraction and X-ray photoelectron spectroscopy show that the thin film deposited on the cathode and the gate electrode is SnO2 thin film. The atomic force microscopy results show that the roughness of the SnO2 thin film increases with deposition time, Increasing the film thickness increases. The field emission test showed that the conduction current and the emission current of the prepared SnO2 surface conduction field-emission cathode array were completely controlled by the gate voltage. The anode voltage and the gate voltage were 3200 V and 200 V at the SnO2 film thickness of 60 nm, respectively. The electron emission efficiency of SnO2 surface conduction field emission cathode array was 0.72% when the spacing of yin and yang was 500μm, and the emission brightness was 650 cd / m2, which indicated that SnO2 thin film had better potential application in surface conduction field emission cathode array.