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In this paper, an effective and succinct radio-frequency(RF) grounding technique for class-AB power amplifier(PA) is presented. The proposed technique employs a grounding path, resonant with a capacitor in series at the center of the fundamental and second-order harmonic frequencies, between the critical ground nodes, to ensure a low impedance path. The power loss due to imperfect grounding is then reduced by 2 d B,and the saturated output power and power added efficiency(PAE) are therefore significantly improved. A fully integrated 5.8-GHz PA with the proposed technique is designed and implemented in a 65-nm CMOS process.Measured result shows a saturated output power of 25.4 d Bm and a peak PAE of 29.7%, while with only 2.5 V of supply voltage.
In this paper, an effective and succinct radio-frequency (RF) grounding technique for class-AB power amplifier (PA) is presented. The proposed technique employs a grounding path, resonant with a capacitor in series at the center of the fundamental and second -order harmonic frequencies, between the critical ground nodes, to ensure a low impedance path. The power loss due to imperfect grounding is then reduced by 2 d B, and the saturated output power and power added efficiency (PAE) are due significantly improved. A fully integrated 5.8-GHz PA with the proposed technique is designed and implemented in a 65-nm CMOS process. Measured result shows a saturated output power of 25.4 d Bm and a peak PAE of 29.7% while with only 2.5 V of supply voltage .