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新的掩埋氧化物BO-MOS概念被提出来了。BO—MOS具有一个广大的氧化物隔离结构,它不仅使得扩散的侧(比土)隔离,而且也使源、漏扩散的底部隔离,与SOS/MOS类似,然而它保留有高的载流子过移和低的泄漏结特性。因此,在速度、密度和成本方面,它具有显著的优点。试验BO-MOS在LSI生产中应用,1024位静态NMOS RAM已成功地制造出来了,它采用的是重新设计的高密度体NMOS RAM的光掩模(通MBM 8115)。采用现有的SOS/CMOS光掩模制造的环形振荡电路,显示出与原来的SOS器件相等的速度—功耗特性。BO—MOS的制造程序,需要和常规MOS器件同样数量的光掩模,叙述了极重要的制造细节和器件特性。
The new concept of buried oxide BO-MOS was presented. BO-MOS has a vast oxide isolation structure that not only isolates the diffused side (than earth), but also isolates the source and drain diffused bottoms from the SOS / MOS, yet retains high carriers Over-transfer and low leakage junction characteristics. Therefore, it has significant advantages in terms of speed, density and cost. Test BO-MOS in the LSI production applications, 1024-bit static NMOS RAM has been successfully manufactured using a redesigned high-density NMOS NMOS photomask (through MBM 8115). The ring oscillator circuit fabricated using the existing SOS / CMOS photomask shows the same speed-power characteristics as the original SOS device. The BO-MOS fabrication process requires the same number of photomasks as conventional MOS devices and describes extremely important manufacturing details and device features.