据报道,日本Yasuhiko Nakagawa和Yasuo Gomi用磁控反应直流二极管溅射法将Ta_2O_5,沉积在石英基片上,得到了单晶薄膜,并且首次观察到了这种薄膜的压电现象.用叉指换能器在Ta_2O_5薄膜上成功地激发了声表面波.在Ta_2O_5/熔石英基片上,当薄膜厚度h在hk(=2πh/λ)=1.0时,其机电耦合系数k~2=0.5％,它可与熔石英基片上ZnO薄膜的机电耦合系数相比拟. 利用Ta_2O_5单晶的X射线衍射数据,推断出Ta_2O_5 It has been reported that Yasuhiko Nakagawa and Yasuo Gomi of Japan have deposited a single crystal film of Ta_2O_5 on a quartz substrate by DC magnetron sputtering and the piezoelectric phenomenon of this film was observed for the first time. The surface acoustic wave was successfully excited on the Ta_2O_5 thin film.On the Ta_2O_5 / fused silica substrate, the electromechanical coupling coefficient k ~ 2 = 0.5% when the thickness h of the film was hk (= 2πh / λ) = 1.0, Compared with the electromechanical coupling coefficient of ZnO thin film on the fused silica substrate, by using the X-ray diffraction data of the Ta_2O_5 single crystal, it is deduced that the Ta_2O_5