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研究了干和湿条件下,在β-SiC薄膜上生长的SiO_2薄膜。β-SiC薄膜异质外延是生长在正晶轴和与晶轴偏离2°的两种(001)硅衬底上。在10kHz~1MHz的范围内,测量了金属-氧化物-半导体结构的电容-电压和电导-电压特性。这些结果表明,对于偏晶轴样品,界面的陷阱密度和有效固定氧化物电荷密度,一般比正晶轴样品低一些。
The SiO 2 thin films grown on β-SiC films under dry and wet conditions were studied. The β-SiC thin film heteroepitaxy is grown on both the positive and two (001) silicon substrates that deviate from the crystal axis by 2 °. The capacitance-voltage and conductometric-voltage characteristics of the metal-oxide-semiconductor structure were measured over the range of 10 kHz to 1 MHz. These results show that for off-axis samples the interfacial trapping density and effective fixed oxide charge density are generally lower than for the positive-axis samples.