东芝公司在日本京都VLSI研讨会上宣布了两项新工艺开发,一项是用于65nm CMOS的一种新的高介电常数K栅介质HfSiON,另一项是用绝缘体硅上硅(SOI)晶片制造的世界上首只隐埋动态随机存取存储器(DRAM)。东芝公司采用HfSiON开发出一种50nm栅长CMOS晶体管,其泄漏电流只有采用常规SiO_2栅介质器件的千分之一。未来一代一代的CMOS需要像HfSiON这样的新介 Toshiba Corporation announced two new process developments at the VLSI Symposium in Kyoto, Japan. One is HfSiON, a new K dielectric for 65nm CMOS and the other is silicon on insulator (SOI) The world’s first chip-made DRAM chip. Toshiba has developed a 50nm gate-length CMOS transistor using HfSiON, which uses only one-thousandth the leakage current of conventional SiO_2 gate dielectrics. Future generations of CMOS need new media like HfSiON