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设计低噪声场效应放大器时,器件的“s”参数和最佳信源阻抗是极其重要的参数.根据GaAs MESFET“s”参数理论计算公式,从小信号等效电路元件值计算WC50型MESFET的“s”参数列于表1.
The “s” parameter and the best source impedance of the device are very important parameters when designing a low-noise field-effect amplifier.According to the theoretical calculation formula of the GaAs MESFET “s” parameter, s "parameters are listed in Table 1.