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将能量为45keV的Ce离子注入到Si单晶片中，研究硅化铈薄膜的离子束合成及其室温光致发光特性．透射电镜观察表明在单晶硅的表面形成厚100nm的Ce离子注入层，选区电子衍射和X射线衍射分析表明注入层内形成了CeSi2．CeSi2的结晶程度随注入剂量的增加而逐渐完整．用远紫外光激发得到了室温蓝紫色PL谱．以红光（650～700nm）激发，则上转换蓝光和紫光发射的效率较高，其发光特性比较稳定．蓝光和紫光受激发射峰的强度随注入剂量的增加而迅速增加．
Ce ions with energy of 45 keV were implanted into Si single crystal wafers to study ion beam synthesis and room-temperature photoluminescence of cerium-arsenide thin films. Transmission electron microscopy showed that a Ce ion implantation layer with a thickness of 100 nm was formed on the surface of the single crystal silicon. The selective electron diffraction and X-ray diffraction analysis showed that CeSi2 was formed in the implantation layer. The degree of crystallinity of CeSi2 gradually became complete with the increase of injected dose. The PL spectrum of blue-violet at room temperature was obtained by far ultraviolet excitation. With red light (650 ~ 700nm) excitation, the upconversion blue and violet emission efficiency is higher, the light-emitting characteristics of relatively stable. The intensities of the blue and violet stimulated emission peaks rapidly increase with the injected dose.