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日本松下电器产业公司已研制成耗散功率为以前 1/ 10 0超节能的单片量子Ｓｉ存储器。采用ＭＯＳＦＥＴ制造工艺和在相同条件下可制作Ｓｉ量子器件的技术 ,以及利用Ｓｉ量子器件负阻特性的低压工作双稳定电路技术。其特征是在同一衬底上实现Ｓｉ量子器件和ＭＯＳＦＥＴ的混合组
Matsushita Electric Industrial Co., Ltd. of Japan has developed a monolithic quantum memory Si that consumes over one-tenth of the previous ultra-low power consumption. MOSFET manufacturing process and the same conditions can be made of Si quantum devices technology, and the use of Si quantum devices negative resistance characteristics of low-voltage operating bistable circuit technology. It features a mixed set of Si quantum devices and MOSFETs on the same substrate