论文部分内容阅读
本文从MOS管电容模型出发详细分析了MOS源漏自举电路的自举物理过程,认为其中负载管栅电容主要起耦合作用.所得自举率公式、输出达到V_(DD)的判据及充电时间公式与实验电路测试结果及计算机模拟相吻合.源举电路中自举电容取2倍左右负载管栅电容为佳,而漏举电路则无需专门设置自举电容.
Starting from the MOS tube capacitance model, this paper analyzes the bootstrap physical process of MOS source-drain bootstrap circuit in detail, and considers that the load tube gate capacitance mainly plays the role of coupling. The resulting bootstrapping rate formula, the output reaching V_ (DD) criterion and the charging The time formula is in good agreement with the experimental circuit test results and computer simulations. The bootstrap capacitor in the source circuit is about twice as good as the load tube gate capacitor. However, the bootstrap capacitor does not need to be specially set for the bootstrap circuit.