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由于Cu线热导率高、电性能好、成本低,将逐渐代替传统Au线应用于IC封装。但Cu线键合也存在Cu材料本身固有特性上的局限:易氧化、硬度高及应变强度等。表面镀Pd Cu线材料的应用则提供了一种防止Cu氧化的解决方案。然而,Cu线表面的Pd层很可能会参与到键合界面形成的行为中,带来新的问题,影响到Cu线键合的强度和可靠性。对镀Pd Cu线键合工艺中Pd的行为进行了系统的研究,使用了SEM,EDS等分析手段对Cu线、烧结Cu球(FAB)、键合界面等处Pd的分布状况进行了检测,结果证明Pd的空间分布随着键合工艺的进行发生了很大的变化,同时还对产生Pd分布变化的原因进行了分析和讨论。
Due to its high thermal conductivity, good electrical properties and low cost, Cu wire will gradually replace the traditional Au wire used in IC packages. However, there are Cu Cu wire bonding inherent limitations inherent in the material: easy oxidation, high hardness and strain strength. The application of Pd-plated Pd wire material provides a solution to prevent the oxidation of Cu. However, the Pd layer on the surface of Cu wire is likely to participate in the formation of bonding interface, which brings new problems and affects the strength and reliability of Cu wire bonding. The behavior of Pd in the Pd-Pd wire bonding process was studied systematically. The distribution of Pd at Cu wire, sintered Cu ball (FAB) and bonding interface was investigated by SEM, EDS and other analytical methods. The results show that the spatial distribution of Pd changes greatly with the bonding process, and the reason for the change of Pd distribution is also analyzed and discussed.