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随着超大型集成电路的发展,需要选用介电性能合适的薄膜材料来制备微型电容器。以前,制备这种电容器所用的材料SiO_2和Ta_2O_5本身存在着很多问题。最近日本科研人员以CeO_2作为薄膜绝缘材料进行了试验,并对其电性能作了报道。 CeO_2的化学稳定性好,介电常数高(为26),因而是最具吸引力的绝缘材料之一。用电子束蒸发技术可将CeO_2沉积在硅片上,制成高质量的薄膜。预计这种以CeO_2/Si型结构制成的稳定电容器,将不仅用于超大型集成电路中,也可用于超导材料缓冲层中。
With the development of very large integrated circuits, the need to choose the dielectric properties of the appropriate thin-film materials to prepare micro-capacitors. In the past, there were many problems with SiO 2 and Ta 2 O 5 themselves for preparing such capacitors. Recently Japanese researchers CeO_2 as a thin film insulation materials were tested, and its electrical properties were reported. CeO 2 chemical stability, high dielectric constant (26), which is one of the most attractive insulation materials. Electron beam evaporation technology can be deposited on the silicon in CeO 2, made of high quality film. It is expected that this stable capacitor made of CeO 2 / Si type structure will be used not only in very large integrated circuits but also in the superconducting material buffer layer.