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在真空环境中,采用脉冲激光烧蚀技术,分别在衬底加温和室温条件下沉积制备了纳米Si薄膜.对在室温条件下制备得到的非晶Si薄膜,采用后续热退火实现其晶化.通过扫描电子显微镜、Raman散射仪和X射线衍射仪对制备的薄膜形貌、晶态成分进行表征,得到两种情况下纳米Si晶粒形成的阈值温度分别为700℃和850℃,通过定量计算比较了两种情况下晶粒成核势垒的大小,并从能量角度对阈值温度的差别进行了理论分析.
In a vacuum environment, a pulsed laser ablation technique was used to deposit nanostructured Si thin films respectively under substrate heating and room temperature conditions. The amorphous Si thin films prepared at room temperature were annealed by subsequent thermal annealing The morphology and crystalline components of the prepared films were characterized by means of scanning electron microscopy, Raman scattering and X-ray diffractometry, respectively. The threshold temperature for the formation of nano-Si grains was 700 ℃ and 850 ℃, respectively. The size of the nucleation barrier was calculated and compared between the two cases. The difference of the threshold temperature from the energy point of view was analyzed theoretically.