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利用焊点间距为100μm,高度约为45μm,成分为Sn-3.0Ag-0.5Cu(wt%)(SAC305)的倒装硅芯片与BT树脂基板组装互连,分别在150、125和100℃条件下时效至650 h。研究时效过程中界面主要金属间化合物的生长,结合经验功率定律及阿伦斯公式计算基板侧Cu焊盘界面IMC生长的动力学参数,对IMC的生长动力学探讨。结果表明,在互连回流后,双侧焊盘界面主要IMC为(Cu,Ni)6Sn5。在时效前100 h,(Cu,Ni)6Sn5生长速率较快;而在随后的时效过程中,随时效时间的增加生长速率逐渐降低。界面主要金属间化合物(Cu,Ni)6Sn5生长动力学研究结果可知:150、125以及100℃条件下时间参数分别为2.61、2.35和2.18,界面(Cu,Ni)6Sn5的生长激活能为67.89 kJ/mol。
The flip-chip silicon chips having a solder joint pitch of 100 μm and a height of about 45 μm and having a composition of Sn-3.0Ag-0.5Cu (wt%) (SAC305) were assembled and interconnected with a BT resin substrate under conditions of 150, 125 and 100 ° C. Under the aging to 650 h. To study the growth of intermetallic compounds during aging, kinetics parameters of IMC growth at substrate-side Cu pad interface were calculated based on empirical power law and Ahrens formula. The results show that the main IMC of the two-sided pad interface is (Cu, Ni) 6Sn5 after the interconnection reflow. The growth rate of (Cu, Ni) 6Sn5 was faster at 100 h before aging, while the growth rate gradually decreased with the aging time in the subsequent aging. The results of kinetics of growth of the interface intermetallic compound (Cu, Ni) 6Sn5 reveal that the time parameters of Cu, Ni and Cu are respectively 2.61, 2.35 and 2.18 under the conditions of 150, 125 and 100 ℃, and the growth activation energy of 6Sn5 is 67.89 kJ / mol.