论文部分内容阅读
随着情报处理系统向高性能化发展,对双极的单块集成电路高速化的要求也越来越强了。以前,做为适应这种要求的方法,从电路设计、制造过程等方面采用了各种各样的方法,而从制造过程方面来改善有源器件三极管,使集成电路高性能化,这是传统的方法。在超高速的门电路、记录电路中、为了提高组合元件晶体三极管的开关速度,发射极条必须要窄、基极结必须做得很浅。现在广泛使用的泡发射极法,因为发射极扩散窗口和发射极电极引线窗口能兼用,故把发射极条做成4微米以下的宽度也是容易的。可是,基极结一变浅,泡出工艺就困难了。特别是基极结深在5000埃以下时,由于为形成电极接触而进行的热处理,而引起
With the development of high-performance intelligence processing systems, the demand for high speed bipolar monolithic integrated circuits is also growing. In the past, as a method to meet such a requirement, various methods have been adopted in terms of circuit design, manufacturing process, etc., and the improvement of the active device transistor from the manufacturing process to make the integrated circuit high-performance Methods. In the ultra-high-speed gate circuits, recording circuits, in order to improve the switching speed of the transistor components, the emitter bar must be narrow, the base junction must be done very shallow. The currently widely used bubble emitter method makes it easy to make the emitter strip to a width below 4 microns since both the emitter diffusion window and the emitter electrode lead window can be used together. However, a shallow base knot, bubble out of the process difficult. In particular, when the base junction depth is below 5000 Å, it is caused by the heat treatment for forming the electrode contact