一、前言复盖在半导体表面的氧化层是器件和集成电路的一个组成部分,器件和集成电路的质量优劣,很大程度上取决于SiO_2—Si界面的质量状况,因此,半导体表面状态的良好控制,是制造高稳定性、高可靠性器件和集成电路的重要途经之一。MOS电容C—V法,由于测试结构简单,测量迅速简便,而且是非破坏性的,并能获得多种测量数据,这种方法提供了一个研究SiO_2—Si界面性质的便利方法,因而被广泛用于半导体工艺的质量监控。 I. INTRODUCTION The oxide layer that covers the surface of semiconductors is an integral part of devices and integrated circuits. The quality of devices and integrated circuits depends largely on the quality of the SiO_2-Si interface. Therefore, the semiconductor surface states Good control is one of the important ways to create high-stability, high-reliability devices and integrated circuits. The MOS Capacitor C-V method is widely used due to its simple test structure, quick and easy measurement, and non-destructive measurement and the availability of a wide range of measurement data. This method provides a convenient way to study the properties of the SiO_2-Si interface In the semiconductor process of quality control.