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对硅化钯-P型硅肖特基势垒二极管(SBD)的界面性质作了AES谱和EBIC像分析,估算了Pd_xSi_y层厚度和肖特基结的结深。在室温下由示波器响应脉冲波形估算SBD对1.06μm激光的响应时间小于1ns。从深能级瞬态电容谱仪得到的DLTS谱峰计算出样品表面空间电荷区中深能级的能级位置E_T—E_V=0.33eV,俘获截面σ_p(248K)=4.4×10~(-18)cm~2,深能级的平均杂质浓度N_T=0.085(N_A—N_D)。讨论了激光响应脉冲波形后沿变缓现象。
AES and EBIC images of Pd-Si-y layer thickness and junction depth of Schottky junction were calculated for the interface properties of Pd-Si Schottky barrier diode (SBD). The response time of SBD to 1.06μm laser is estimated to be less than 1ns at room temperature from the oscilloscope response pulse waveform. The DLTS peak obtained from the deep level transient capacitance spectrometer calculates the energy level E_T-E_V = 0.33eV and the capture cross section σ_p (248K) = 4.4 × 10 ~ -18 ) cm 2, and the average impurity concentration N_T of the deep level is 0.085 (N_A-N_D). The phenomenon of slowing of the trailing edge of the laser response pulse waveform is discussed.