介绍了一种被称为量子点量子阱 (Quantum- dot quantum wells简称 QDQWs)的新型半导体材料 ,并为其建立了合适的计算模型 .再以 B样条为展开基函数 ,采用变分法对其进行了计算 ,得到了量子点量子阱中氢原子能谱 .计算结果表明 ,当 QDQW的半径 (或核半径 )增大时 ,给体能级随之减小并逐步陷入小阱深度内 .因此只要适当地改变这种新材料的周期性 ,则施主粒子的波函数、能量等性质就可以人为控制 ,从而可进一步控制半导体材料的光学性能 .同时 ,B样条基函数对于计算局限在有限范围内量子体系的波函数和能量是十分有效的 A new type of semiconductor material called quantum dot quantum wells (QDQWs) is introduced and a suitable calculation model is established for it.By using B-spline as the basis function and variational method The results show that when the radius (or core radius) of QDQW increases, the energy level of QDQW decreases and gradually falls into the trap depth, so long as Appropriately changing the periodicity of this new material, the donor particle’s wavefunction, energy and other properties can be artificially controlled, which can further control the optical properties of semiconductor materials.At the same time, the B-spline basis function is limited to a limited extent The quantum system wave function and energy is very effective