【摘 要】
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The sensitivity and selectivity to H2 of a new In2O3-based gas sensor were improved significantly by surface chemical modification. A dense layer of SiO2 near t
【机 构】
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School of Chemical Engineering,Department of Chemical Engineering
论文部分内容阅读
The sensitivity and selectivity to H2 of a new In2O3-based gas sensor were improved significantly by surface chemical modification. A dense layer of SiO2 near the surface of the porous In2O3 bead was formed by chemical vapor deposition (CVD) of diethoxydimethysilane (DEMS).The dense layer functioned as a molecular sieve, thereby the diffusion of gases with large molecular diameters, except for H2, was effectively controlled, resulting in a prominent selectivity and high sensitivity for H2. The working mechanism of the sensor was also presented.
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