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调制掺杂(Al,Ga)As-GaAs异质结二维电子气场效应晶体管(TEGFET)是一种基于(Al,Ga)As-GaAs的界面处存在着高载流子迁移率二线电子气的原理制成的一种新型场效应器件.科学家们预言这种器件将在微波领域及超高速超大规模集成电路中得到重要应用.本文简述了它的工作机理、基本结构、耗尽型及增强型模式、工艺制造、目前达到的性能与通常的GaAs FET的比较、初步的器件物理分析和伏安特性计算.着重指出分子束外延生长工艺是这种器件的关键工艺.
Modulation Doped (Al, Ga) As-GaAs Heterostructures Two-dimensional electron gas field effect transistors (TEGFETs) are based on the (Al, Ga) As-GaAs interface with high carrier mobility. A new type of field-effect device made of the principle of scientists predicted that the device will be in the field of microwave and ultra-high-speed VLSI applications have been important.This paper outlines its working mechanism, the basic structure, depletion and Enhanced Mode, Process Fabrication, Current Achieved Performance vs. Common GaAs FETs, Preliminary Device Physical Analysis, and Volt-ampere Characteristic Calculations. It is emphasized that MBE growth is a key process for this device.