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大气压非平衡等离子体枪是近年来发展的一种新型的薄膜沉积方法,由于其相较于传统的气相镀膜方法,具有常压、低温、沉积速率快、设备简单等优点,一直以来受到了人们的广泛关注。利用这种类型沉积设备,以四乙氧基硅烷(TEOS)为先驱体,研究常压下沉积的二氧化硅薄膜的性质和规律。实验中,以氮气和少量氧气组成的混合气体作为等离子体的发生气体,以氮气作为单体的载气,并调节载气流量在60~160mL/min之间。通过光学椭偏仪、红外光谱(FT-IR)、扫描电镜(SEM)对所沉积的薄膜进行表征。结果表明,在硅衬底表面沉积的薄膜为包含OH基团的二氧化硅薄膜,且在薄膜的表面嵌有球状颗粒。随着TEOS流量的增加,薄膜中OH基团含量、表面颗粒含量和尺寸都显著增长。分析认为,TEOS流量增加引起的薄膜组分和表面形貌的变化,是由沉积速率变大引起的。
Atmospheric pressure non-equilibrium plasma gun is a new type of thin film deposition method developed in recent years. Compared with the traditional vapor deposition method, it has the advantages of atmospheric pressure, low temperature, fast deposition rate and simple equipment, and has been widely used by people The widespread concern. Using this type of deposition apparatus, tetraethoxysilane (TEOS) was used as a precursor to study the properties and regularity of silica films deposited at atmospheric pressure. In the experiment, a mixed gas consisting of nitrogen and a small amount of oxygen is used as a plasma gas, a nitrogen carrier gas and a carrier gas flow rate of 60 to 160 mL / min. The deposited films were characterized by optical ellipsometry, infrared spectroscopy (FT-IR) and scanning electron microscopy (SEM). The results show that the film deposited on the surface of the silicon substrate is a silica film containing OH groups, and spherical particles are embedded on the surface of the film. With the increase of TEOS flow rate, the content of OH groups, the content of surface particles and the size of the films increased significantly. The analysis shows that the change of the composition and surface morphology of the thin films caused by the increase of TEOS flow rate is caused by the increase of the deposition rate.