用电子辐照改善硅功率器件的性能是一项极有前途的新技术。其所依据的基本原理是:电子射线可使硅晶体中产生一些缺陷,这些缺陷构成了少数载流子的复合中心,使得少数载流子的复合率增加,寿命缩短,从而可以改善硅功率器件的频率特性以及其它方面的性能。工艺简易,且可大辐度提高成品率,有明显的经济效益。国内外的大量实验均证明了电子辐照技术的优越性。 Using electron irradiation to improve the performance of silicon power devices is a promising new technology. It is based on the basic principle is: electron beam can produce some defects in the silicon crystal, these defects constitute a minority carrier recombination center, making minority carrier recombination rate increases, shortened life expectancy, which can improve the silicon power devices Frequency characteristics and other aspects of performance. The process is simple, and the yield can be greatly increased, with obvious economic benefits. A large number of experiments at home and abroad have proved the superiority of electron irradiation technology.