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通过理论计算获得Zn Te/Si(211)与Zn Te/Ga As(211)异质结构样品室温下的热应变分布与曲率半径,并采用激光干涉仪测量两个样品室温下的曲率半径。研究发现,在(211)面上进行异质外延,两个互相垂直的晶向方向[1-1-1]和[01-1]的应变分布呈现各向异性,且沿两个方向上的表面曲率半径亦存在差异。Zn Te/Ga As(211)样品的激光干涉测量结果与理论计算较为吻合,均为同一数量级的表面曲率半径方向为负的张应变,Zn Te/Si(211)样品的测量结果则存在较大差异。由于Si衬底在高温脱氧的过程中产生了表面曲率半径方向为正的塑性形变,在一定程度上降低了外延Zn Te后异质结构的弯曲程度,减小了热失配应变。
The thermal strain distributions and radii of curvature of Zn Te / Si (211) and Zn Te / Ga As (211) heterostructures at room temperature were calculated theoretically and the radii of curvature of the two samples at room temperature were measured by laser interferometer. It has been found that heteroepitaxial growth on the (211) plane results in anisotropy of strain distributions in two mutually perpendicular crystal orientation [1-1-1] and [01-1], and anisotropy in both directions There is also a difference in surface radius of curvature. The results of laser interference measurement of Zn Te / Ga As (211) samples are in good agreement with the theoretical calculations, and they are all the same order of magnitude of tensile strain with negative surface curvature radius. The results of Zn Te / Si (211) difference. Since Si substrate produces plastic deformation with positive radius of curvature in the process of high temperature deoxidation, it can reduce the degree of bending of the heterostructure after epitaxial ZnTe to a certain extent and reduce the thermal mismatch strain.