论文部分内容阅读
高速光探测器是高速光纤通信系统和网络中的关键器件,它要求光探测器具有宽的频率响应带宽和高量子效率。垂直入光型pin光探测器的高速性能和量子效率均受到吸收层厚度的限制。为了改善其高速性能,采用InGaAsP材料作为吸收层以及限制层渐变掺杂的方法,对垂直入光型pin光探测器的高速响应性能进行了理论研究和仿真,结果表明,高速响应达到了40GHz。与不采用渐变掺杂浓度的同种结构光探测器相比,高速响应性能显著提高。
High-speed optical detectors are the key devices in high-speed optical fiber communication systems and networks. They require optical detectors with wide frequency response bandwidth and high quantum efficiency. The high-speed performance and quantum efficiency of vertical light-in pin photodetectors are limited by the thickness of the absorber layer. In order to improve its high-speed performance, the high-speed response performance of the vertical light-in pin photodetector has been theoretically studied and simulated by using InGaAsP material as absorber layer and limiting layer gradient doping. The results show that the high-speed response reaches 40GHz. The high-speed response performance is significantly improved compared to the same-structure photodetector that does not use the graded doping concentration.