The growth of high-performance Mg-doped p-type AlxGa1-xN (x = 0.2) using metal-organic chemical vapor deposition is reported. The influence of growth conditions
A zero-pole cancellation transimpedance amplifier(TIA)has been realized in 0.35μm RF CMOS technology for Gigabit Ethernet applications.The TIA exploits a zero-
We have tested and analyzed the properties of two-dimensional Position-Sensitive-silicon-Detector (PSD) with new integrated preamplifiers. The test demonstrates