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研究了顺次淀积在 Si (10 0 )衬底上的 Ni/ Pt和 Pt/ Ni的固相硅化反应 .研究发现 ,当 1nm Pt作为中间层或覆盖层加入 Ni/ Si体系中时 ,延缓了 Ni Si向 Ni Si2 的转变 ,相变温度提高 .对于这种双层薄膜体系 ,80 0℃退火后 ,XRD测试未检测到 Ni Si2 相存在 ;85 0℃退火后的薄膜仍有一些 Ni Si衍射峰存在 . 80 0℃退火后的薄膜呈现较低的电阻率 ,在 2 3— 2 5 μΩ· cm范围 .上述薄膜较 Ni/ Si直接反应生成膜的热稳定性提高了 10 0℃以上 .这有利于Ni Si薄膜材料在 Si基器件制造中的应用 .
The solid-phase silicidation of Ni / Pt and Pt / Ni sequentially deposited on Si (100) substrates was investigated. It was found that when 1 nm Pt was added to the Ni / Si system as an intermediate layer or overlay, The transition temperature of Ni Si to Ni Si2 increases and the phase transition temperature increases.For this two-layer thin film system, NiSi2 phase is not detected by XRD after annealed at 80 ℃, and there are still some NiSi Diffraction peaks exist.The films annealed at 80 ℃ have a lower resistivity in the range of 2 3 ~ 2 5 μΩ · cm.The thermal stability of the film is higher than that of the direct reaction of Ni / Si by more than 100 ℃. This is in favor of the application of NiSi thin film material in the manufacture of Si-based devices.