Low dimensional silicon,where quantum size effects play significant roles,enables silicon with new photonicfunctionalities.In this short review,we discuss the
We have fabricated In0.53Ga0.47As/AlAs/InP resonant tunneling diodes(RTDs) based on the air-bridge technology by using electron beam lithography processing.The
With HfON filling the holes in porous silicon (PS), films with improved photoluminescence (PL) at room temperature were prepared. A strong blue peak at 425 nm a