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本文介绍n阱CMOS与BIPOlAR集成电路兼容工艺。在CMOS集成电路工艺的基础上增加一次双极晶体管的基区注入,CMOS特性不改变。
This article describes the n-well CMOS and BIPOlAR integrated circuit compatible process. Based on the CMOS integrated circuit technology, a bipolar transistor is added to the base region for injection without changing the CMOS characteristics.