美空军研究院(AFRL)的工程技术人员声称制造出首只金刚石上GaN高电子迁移率晶体管(HEMT)。尽管AFRL研究小组的说明只是概括性的,没有提到输出功率和工作频率,但已透露了以下内容:“晶体管初步结果表明,AlGaN/GaN材料经受了所有各项工艺步骤,包括高温欧姆接触退火。”由于金刚石 Engineers at the Air Force Research Institute (AFRL) claim to make the first diamond-on-GaN high electron mobility transistor (HEMT). Although the AFRL research group’s description is only general and does not mention output power and operating frequency, the following has been disclosed: “Preliminary results from the transistor show that the AlGaN / GaN material has undergone all of the various process steps including high temperature Ohmic Contact Annealing ”Because of diamonds