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利用532 nm连续激光对掺Si的n型砷化镓材料进行作用,材料的晶轴方向为<100>偏<111A>方向15°。实验观察到,连续激光与材料相互作用过程中,材料作用表面的反射光在观察屏上形成环状结构,认为是由夫琅和费衍射产生的,并首次提出将衍射作为探测材料损伤的方法。实验测得砷化镓的阈值损伤功率密度为2.56×10~5 W/cm~2。利用温度场的热传导方程计算获得材料的损伤阈值时间与入射光功率密度的关系曲线,并与实验曲线进行了比较。
The 532 nm continuous laser is used to act on the n-type gallium arsenide doped Si material, and the crystal axis direction of the material is 15 ° in the direction of <100> partial <111A>. It is observed experimentally that in the process of continuous laser-material interaction, the reflected light from the material’s action surface forms a ring structure on the observation screen, which is believed to be caused by Fraunhofer diffraction. For the first time, diffraction is used as a method to detect material damage. The experimentally measured threshold damage power density of gallium arsenide is 2.56 × 10 ~ 5 W / cm ~ 2. The curve of the damage threshold time and the power density of incident light was calculated by the heat conduction equation of the temperature field and compared with the experimental curve.