Al-Ni二元系δ相理想成份为Ni_2Al_3。有文献报道,在其富Al端形成替代固溶体,而在富Ni端,Ni原子填在空缺的位置上,β相理想成份为NiAl,富Ni端形成替代式固溶体,在富Al端,形成Ni的缺位固溶体。按这样模型算出了价电子密度(D_v)和总电子密度(D_t)。计算的D_v和测得的S线型参数以及计算的D_t和测得的正电子湮没寿命τ_1分别列在图1和图2。 The ideal composition of δ-phase of Al-Ni binary system is Ni_2Al_3. It has been reported in the literature that an alternative solid solution is formed on the Al-rich side, while at the Ni-rich end, the Ni atom fills in the vacant position, the β phase ideal component is NiAl, the Ni-rich side forms an alternative solid solution, The absence of solid solution. According to this model, the valence electron density (D_v) and the total electron density (D_t) were calculated. The calculated D_v and the measured S-line parameters as well as the calculated D_t and the measured positron annihilation lifetime τ_1 are shown in FIGS. 1 and 2, respectively.