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涂层导体用金属基带的表面状况对在其上制备的过渡层的形貌和取向有很大影响.在Ni单晶、轧制辅助双轴织构基带(RABiTS)Ni和经过硫化处理的Ni基带三种不同衬底上采用磁控溅射法制备了CeO2过渡层.结果表明,在Ni单晶和硫化处理的Ni基带上制备的CeO2薄膜取向较差,而在RABiTSNi上制备的CeO2薄膜完全呈c轴取向,表面平整致密.反射高能电子衍射图显示,RABiTSNi具有的c(2×2)的S超结构对CeO2薄膜的取向生长起到了很重要的作用.
The surface condition of the metal base tape for the coated conductor has a great influence on the morphology and orientation of the transition layer prepared on it.In the case of Ni single crystals, RABiTS Ni and Sulfided Ni The CeO2 transition layer was prepared by magnetron sputtering on three different substrates of the substrate.The results show that the CeO2 thin films prepared on the Ni single crystal and the sulfide Ni substrate have poor orientation and the CeO2 thin films prepared on the RABiTSNi are completely The c-axis orientation and smooth surface were observed.The reflection high-energy electron diffraction (XRD) images showed that the c (2 × 2) S-type structure of RABiTSNi played an important role in the orientation growth of CeO2 thin films.