论文部分内容阅读
己采用了液相外延(LPE)生长的p-型Pb_(0.8)/p-型Pb_(0.8)Sn_(0.2)Te(PbTe在Pb_(0.8)Sn_(0.2)Te上面)作为双色(3～5和8～14微米)探测器的衬底。用平面扩散技术在液相外延生长衬底上形成二极管。文中并描述了在80K下工作的12元阵列在标称300K、2π视场背景时所表现的特性。六个Pb_(0.8)Sn_(0.2)Te二极管和六个PbTe二极管的平均探测度分别为2.2×10~(10)和1.0×10~(11)厘米·赫~(1╱2)/瓦。
The p-type Pb_ (0.8) / p-type Pb_ (0.8) Sn_ (0.2) Te (PbTe on Pb_ (0.8) Sn_ (0.2) Te) grown by liquid phase epitaxy (LPE) 5 and 8 to 14 microns) detector. A diode is formed on the liquid phase epitaxial growth substrate by planar diffusion technique. The paper also describes the performance of a 12-element array operating at 80K for a nominal 300K, 2π field background. The average detection probabilities of six Pb_ (0.8) Sn_ (0.2) Te and six PbTe diodes are 2.2 × 10 ~ (10) and 1.0 × 10 ~ (11) cm ~ (1 ÷ 2) / W, respectively.