日本日立制作所采用容易达到高集化的DRAM技术研制成模拟神经信息处理结构的神经LSI的基本电路。目前，用sRAM很难制作神经u1，用＊＊＊M已开始制作神经LSI进行输入信息处理。日立的LSI，在DRAM中是记忆神经细胞结合很强的结构，所制的基本电路是实用LSI1／256的样品，晶体管的 Hitachi, Japan’s high-density DRAM technology is easy to achieve the development of a neural circuit to simulate the structure of nerve information processing LSI. At present, it is very difficult to make neural u1 with sRAM, and it has already started to make neuronal LSI with *** M for input information processing. Hitachi’s LSI, in memory of DRAM is a combination of strong structure of neural cells, the basic circuit is made of practical LSI1 / 256 samples, the transistor