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本文利用光电流谱方法研究了10—300K温度范围内In_(0.2)Ga_(0.8)As/GaAs应变层短周期超晶格的Wannier-Stark效应,在室温及低温下均观察到明显的吸收边场致“蓝移”现象,并对Stark-ladder激子跃迁的能量位置及振子强度随电场的变化给予详细讨论。实验结果表明,利用In_(0.2)Ga_(0.8)As/GaAs应变层超晶格的Wannier-Stark效应可以制作0.98μm波长范围的电光调制器和自电光双稳器件。
In this paper, the Wannier-Stark effect of short-period superlattices in the In 0.2 Ga 0.8 As / GaAs strained layer in the temperature range of 10-300 K was studied by means of photocurrent spectroscopy. The obvious absorption edge was observed at room temperature and low temperature Field “blue-shift” phenomenon, and the Stark-ladder exciton transition energy position and oscillator strength with the change of the electric field to give a detailed discussion. The experimental results show that the electro-optic modulator and self-optical bistable device with 0.98μm wavelength range can be fabricated by the Wannier-Stark effect of the superlattice of In_ (0.2) Ga_ (0.8) As / GaAs strained layer.