磷砷化镓外延片是当前电注入发光器件的主要材料。它的磷与砷克分子比,对所作发光器件的特性,特别是发光的波长与亮度,有很大的影响。由于磷砷化镓外延层中的磷是取代了砷的位置,形成置换式固溶体。因此,通常只要测出磷的百分比,即可获知磷砷的克分子比值。 GaAs epitaxial wafers are the main materials for current injection of light-emitting devices. Its phosphorus and arsenic molar ratio of the light-emitting device made of the characteristics, especially the wavelength and brightness of light have a great impact. Since phosphorus in the gallium arsenide gallium arsenide epitaxial layer is replaced by arsenic, a displacement solid solution is formed. Therefore, usually as long as the percentage of phosphorus measured, you can know the molar ratio of phosphorus and arsenic.