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We report a selective area growth(SAG) method to define the p-GaN gate of AlGaN/GaN high electron mobility transistors(HEMTs) by metal-organic chemical vapor deposition.Compared with Schottky gate HEMTs,the SAG p-GaN gate HEMTs show more positive threshold voltage(V_(th)) and better gate control ability.The influence of Cp_2Mg flux of SAG p-GaN gate on the AlGaN/GaN HEMTs has also been studied.With the increasing Cp_2Mg from 0.16 μmol/min to 0.20 μmol/min,the V_(th) raises from-0.67 V to-0.37 V.The maximum transconductance of the SAG HEMT at a drain voltage of 10 V is 113.9 mS/mm while that value of the Schottky HEMT is 51.6 mS/mm.The SAG method paves a promising way for achieving p-GaN gate normally-off AlGaN/GaN HEMTs without dry etching damage.
We report a selective area growth (SAG) method to define the p-GaN gate of AlGaN / GaN high electron mobility transistors (HEMTs) by metal-organic chemical vapor deposition. Compared with Schottky gate HEMTs, the SAG p-GaN gate HEMTs show more positive threshold voltage (V_ (th)) and better gate control ability. The influence of Cp_2Mg flux of SAG p-GaN gate on the AlGaN / GaN HEMTs has also been studied. / min, the V_ (th) raises from-0.67 V to-0.37 V. The maximum transconductance of the SAG HEMT at a drain voltage of 10 V is 113.9 mS / mm while that value of the Schottky HEMT is 51.6 mS / mm. The SAG method paves a promising way for achieving p-GaN gate normally-off AlGaN / GaN HEMTs without dry etching damage.