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室温下在低阻单晶ZnS作的金属一半导体二极管上发现有足够强而又很稳定的蓝、绿色场致发光,它是加正向偏压U≥2伏时记录下来的,又由金属接触向ZnS注入空穴所决定。在直流电流10~(-5)～10~(-1)安下用Au作注入接触时,其发光的外量子效率为10~(-4)光量子/电子。
At room temperature in the low-resistance single-crystal ZnS for a metal-semiconductor diode found strong enough and very stable blue and green electroluminescence, it is plus forward bias U ≥ 2 volts recorded by the metal The contact is determined by injecting holes into the ZnS. The external quantum efficiency of luminescence is 10 ~ (-4) photons / electron when Au is used as the implanted contact under DC current of 10 ~ (-5) ~ 10 ~ (-1)