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高迁移率GaAs/AIGaAs二维电子气(2DEG)结构材料在基础物理研究和新型器件及电路的应用方面有十分重要的意义。低温电子迁移率μ超过10~6cm~2/V·s的2DEG材料可用于研究分数量子霍尔效应。高迁移率和高载流子面密度的2DEG材料可用于研制高电子迁移率晶体管(HEMT)、超高速数字集成电路(VHSIC)和微波毫米波单片集成电路(MIMIC)等超高频、超高速微电子器件和电路,它们被广泛应用在雷达、制导、电子对抗、光纤通讯和数字微波通讯等领域。
The high-mobility GaAs / AIGaAs 2DEG structure materials are of great significance in basic physics research and application of new devices and circuits. 2DEG materials with low-temperature electron mobility μ of more than 10 ~ 6cm 2 / V · s can be used to study fractional quantum Hall effect. 2DEG materials with high mobility and high carrier density can be used to develop high electron mobility transistor (HEMT), ultra high speed digital integrated circuit (VHSIC) and microwave millimeter wave monolithic integrated circuit (MIMIC) High-speed microelectronic devices and circuits, which are widely used in radar, guidance, electronic warfare, optical fiber communication and digital microwave communications and other fields.